The dynamic model for the diode is based on Spice parameters. A great advantage compared to the original Spice model is that the dynamic diode model called DiodeReverseRecovery can also simulate reverse recovery.
The model for the diode exhibits reverse recovery based on various sets of parameters. It can either be based on Spice parameters, physical quantities or measured data.
The reverse recovery diode model is found in components/library/Semiconductor/Diode.
Static characteristic
The static V-I characteristic is based on spice parameters and forms the basis for the static curve of the dynamic diode model.
IF | The maximum forward current during the conduction of the diode. During conduction the total amount of scharge is depending on this value. |
dIF/dt | The gradient of the diode current during turn of, measured at the zero crossing of the diode current. This value is depending on the load circuit connected to the diode and the parasitic inductance in series with the diode. |
QRR | The reverse recovered charge is taken from the specification in the data sheet and is specified for a typical forward current IF and turn off gradient dIF/dt of the forward current |
TRR | The reverse recovery time is taken from the specification in the data sheet and is specified for a typical forward current IF and turn off gradient dIF/dt of the forward current |
The parameter for the diode are summarized in the following table. For the parameters that are compatible with the spice diode model the column Spice shows the spice parameter name. Parameters that do not exist in the spice model are indicated with a N.A. Default values for the parameters are given.
Parameter | Default | Spice | Function |
IS | 10-14 | IS | Saturation current. |
BV | 106 | BV | Reverse breakdown "knee" voltage. |
N | 1.5 | N | Emission coeficient. |
TT | 0 | TT | Forward Storage Time (Transit Time). |
Cj0 | 50pF | CJ0 | Junction capacitance. |
RS | 1mOhm | RS | On resistance. |
τrr (tau_rr) | 0 | N.A. | Decay time constant of the reverse recovery current after IRR. If this value is set to zero, the diode has a snappy recovery. |
Rth | 1 | N.A. | Thermal junction-case resistance. |
Cth | 0.5m | N.A. | Thermal junction-case capacitance. |
InitialTemp | 25 | N.A. | Initial junction temperature. |
IF | 0 | N.A. | Measured maximum forward current. |
dIF/dt | 0 | N.A. | Measured current gradient during turn off. (Measure at the zero-crossing) |
QRR | 0 | N.A. | Measured reverse recovery charge. |
TRR | 0 | N.A. | Measured reverse recovery time. |